DC Analysis of InP / GaAsSb DHBT Device
نویسندگان
چکیده
Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenide Antimonide lattice matched to Indium Phosphide is the replacement of Indium Gallium Arsenide based DHBTs because of its non collector blocking effect. Simulated device has shown a dc peak current gain of 70-80 dB, turn on voltage of 0.1V for 0.5 x 1 μm emitter device having 15nm thick uniform GaAsSb base.
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